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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6487/D Complementary Silicon Plastic Power Transistors . . . designed for use in general-purpose amplifier and switching applications. * DC Current Gain Specified to 15 Amperes -- hFE = 20 - 150 @ IC = 5.0 Adc hFE = 5.0 (Min) @ IC = 15 Adc * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490 VCEO(sus) = 80 Vdc (Min) - 2N6488, 2N6491 * High Current Gain -- Bandwidth Product fT = 5.0 MHz (Min) @ IC = 1.0 Adc * TO-220AB Compact Package MAXIMUM RATINGS (1) Rating 2N6487 2N6488 * PNP 2N6490 2N6491* *Motorola Preferred Device NPN PD, POWER DISSIPATION (WATTS) II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I IIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III III I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III II I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII Symbol VCEO VCB VEB IC IB PD PD 2N6487 2N6490 60 70 2N6488 2N6491 80 90 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current 5.0 15 5.0 Collector Current -- Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 75 0.6 Watts W/_C Watts W/_C 1.8 0.014 TJ, Tstg - 65 to + 150 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 VOLTS 75 WATTS _C THERMAL CHARACTERISTICS Characteristic CASE 221A-06 TO-220AB Symbol RJC RJA Max 70 Unit Thermal Resistance, Junction to Case 1.67 _C/W _C/W Thermal Resistance, Junction to Ambient (1) Indicates JEDEC Registered Data. TA TC 4.0 80 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N6487 2N6488 2N6490 2N6491 *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Small-Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) Current-Gain -- Bandwidth Product (2) (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz) Base-Emitter On Voltage (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.5 Adc) (IC = 15 Adc, IB = 5.0 Adc) DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 65 Vdc, VEB(off) = 1.5 Vdc) (VCE = 85 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, VBE = 1.5 Vdc) Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle (2) fT = |hfe| * ftest. + 10 V 2 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. FOR PNP, REVERSE ALL POLARITIES. tr, tf 10 ns DUTY CYCLE = 1.0% 0 25 s v RB t, TIME (ns) - 10 V v Figure 2. Switching Time Test Circuit [ [ 51 Characteristic -4V D1 VCC + 30 V v 2.0%. RC SCOPE 2N6487, 2N6490 2N6488, 2N6491 2N6487, 2N6490 2N6488, 2N6491 2N6487, 2N6490 2N6488, 2N6491 2N6487, 2N6490 2N6488, 2N6491 2N6487, 2N6490 2N6488, 2N6491 1000 100 200 500 20 50 TC = 25C VCC = 30 V IC/IB = 10 10 0.5 0.2 Motorola Bipolar Power Transistor Device Data NPN PNP VCEO(sus) VCE(sat) VBE(on) Symbol VCEX ICEO IEBO ICEX hFE 2.0 1.0 5.0 IC, COLLECTOR CURRENT (AMP) hfe fT Min 5.0 20 5.0 25 70 90 60 80 -- -- -- -- -- -- -- -- -- -- -- tr td @ VBE(off) Max 150 -- 500 500 5.0 5.0 1.3 3.5 1.3 3.5 1.0 1.0 1.0 -- -- -- -- -- Figure 3. Turn-On Time [ 5.0 V 10 mAdc mAdc Adc MHz Unit Vdc Vdc Vdc Vdc -- -- 20 2N6487 2N6488 2N6490 2N6491 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 0.05 0.02 P(pk) ZJC (t) = r(t) RJC RJC = 1.67C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k D = 0.5 0.2 Figure 4. Thermal Response 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 2.0 1.0 0.5 0.2 0.1 100 s 500 s 1.0 ms TJ = 150C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C CURVES APPLY BELOW RATED VCEO 2N6487, 2N6490 2N6488, 2N6491 2.0 5.0 ms dc There are two limitations on the power handling ability of a transistors average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown v 40 60 4.0 10 20 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active-Region Safe Operating Area 5000 1000 700 ts C, CAPACITANCE (pF) Cob 300 200 Cib Cob 1000 t, TIME (ns) 500 200 100 50 tf NPN PNP VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 100 70 50 0.5 NPN PNP TJ = 25C 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 0.2 0.5 Figure 6. Turn-Off Time Figure 7. Capacitances Motorola Bipolar Power Transistor Device Data 3 2N6487 2N6488 2N6490 2N6491 NPN 2N6487, 2N6488 500 TJ = 150C 200 hFE, DC CURRENT GAIN 100 - 55C 50 hFE, DC CURRENT GAIN 25C 200 100 50 25C - 55C TJ = 150C 500 PNP 2N6490, 2N6491 20 10 5.0 VCE = 2.0 V 20 10 5.0 VCE = 2.0 V 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 IC = 1.0 A 4.0 A 8.0 A TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 IC = 1.0 A 4.0 A 8.0 A TJ = 25C Figure 9. Collector Saturation Region 2.8 2.4 V, VOLTAGE (VOLTS) 2.0 1.6 1.2 0.8 0.4 0 0.2 VBE(sat) = IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 TJ = 25C V, VOLTAGE (VOLTS) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 TJ = 25C Figure 10. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data 2N6487 2N6488 2N6490 2N6491 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 2N6487 2N6488 2N6490 2N6491 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N6487/D* 2N6487/D |
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